Heteroepitaxy of Semiconductors Theory, Growth, and Characterization
DescriptionConsidered one of the top research fields in electronics materials today, heteroepitaxy of semiconductors refers to the single-crystal growth of one semiconductor on a different substrate. The application of heteroepitaxy has enabled the development of laser diodes, CD and DVD drives, fiber optic communication systems, high-frequency transistors, wireless communications systems, and high-brightness LEDs for lighting, automotive, and display applications. Heteroepitaxy is now becoming an important technology for digital very-large scale integrated circuits (VLSICs) with the advent of SiGe electronics. This book covers the theory, growth, and characterization of heteroepitaxial cubic and hexagonal semiconductors. It includes practical examples as well as end-of-chapter problems, serving as an ideal reference for professionals and a practical textbook for graduate students. Table of ContentsINTRODUCTIONPROPERTIES OF SEMICONDUCTORS Introduction Crystallographic Properties Lattice Constants and Thermal Expansion Coefficients Elastic Properties Surface Free Energy Dislocations Planar Defects Problems References HETEROEPITAXIAL GROWTH Introduction Vapor Phase Epitaxy (VPE) Molecular Beam Epitaxy (MBE) Silicon, Germanium, and Si1-xGex Alloys Silicon Carbide III-Arsenides, III-Phosphides, and III-Antimonides III-Nitrides II-VI Semiconductors Conclusion Problems References SURFACE AND CHEMICAL CONSIDERATIONS IN HETEROEPITAXY Introduction Surface Reconstructions Nucleation Growth Modes Nucleation Layers Surfactants in Heteroepitaxy Quantum Dots and Self-Assembly Problems References MISMATCHED HETEROEPITAXIAL GROWTH AND STRAIN RELAXATION Introduction Pseudomorphic Growth and the Critical Layer Thickness Dislocation Sources Interactions between Misfit Dislocations Lattice Relaxation Mechanisms Quantitative Models for Lattice Relaxation Lattice Relaxation on Vicinal Substrates: Crystallographic Tilting of Heteroepitaxial Layers Lattice Relaxation in Graded Layers Lattice Relaxation in Superlattices and Multilayer Structures Dislocation Coalescence, Annihilation, and Removal in Relaxed Heteroepitaxial Layers Thermal Strain Cracking in Thick Films Problems References CHARACTERIZATION OF HETEROEPITAXIAL LAYERS Introduction X-Ray Diffraction Electron Diffraction Microscopy Crystallographic Etching Techniques Photoluminescence Growth Rate and Layer Thickness Composition and Strain Determination of Critical Layer Thickness Crystal Orientation Defect Types and Densities Multilayered Structures and Superlattices Growth Mode Problems References DEFECT ENGINEERING IN HETEROEPITAXIAL LAYERS Introduction Buffer Layer Approaches Reduced Area Growth Using Patterned Substrates Patterning and Annealing Epitaxial Lateral Overgrowth (ELO) Pendeo-Epitaxy Nanoheteroepitaxy Planar Compliant Substrates Free-Standing Semiconductor Films Conclusion Problems References APPENDIX A: BANDGAP ENGINEERING DIAGRAMS APPENDIX B: LATTICE CONSTANTS AND COEFFICIENTS OF THERMAL EXPANSION APPENDIX C: ELASTIC CONSTANTS APPENDIX D: CRITICAL LAYER THICKNESS APPENDIX E: CRYSTALLOGRAPHIC ETCHES APPENDIX F: TABLES FOR X-RAY DIFFRACTION INDEX ContributorsAuthor 1 Ayers, John E. University of Connecticut, Storrs, USA |
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CRC Press — 2010 NanoScience and CleanTech catalog
